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4"

6"

8"

直徑

100 mm

150 mm

200 mm

向性

<100>

<100>

<100>

級(jí)別

P/Boron

P/Boron

P/Boron

Growth Method:

CZ

CZ

CZ

電阻率

10-20 Ohm-cm

10-20 Ohm-cm

10-20 Ohm-cm

厚度

525µm ±20µm

675µm ±20µm

725µm ±20µm

TTV:

<4.00µm

<4.00µm

<4.00µm

SFPD:

<2.0µm

<2.0µm

<2.0µm

Warp:

≤30µm

≤30µm

≤30µm

Bow:

≤30µm

≤30µm

≤30µm

微粒數(shù)

≤20@≥0.3µm

≤20@≥0.3µm

≤20@≥0.3µm

正面Front

Polished

Polished

Polished

背面Back

Etched

Etched

Etched

平整度Flat:

2 per SEMI Standard

1 per SEMI Standard

2 per SEMI Standard

Site Flatness:

<2.0µm

<2.0µm

<2.0µm

粗糙Roughness

Typically 2-3Å

Typically 2-3Å

Typically 2-3Å

貨號(hào)

產(chǎn)品名稱(chēng)

規(guī)格

71893-01

Ultra-Flat Silicon Wafer, 4"

1片

71893-02

Ultra-Flat Silicon Wafer, 6"

1片

71893-03

Ultra-Flat Silicon Wafer, 8"

1片